AD8031/AD8032
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Internal Power Dissipation
8-Lead PDIP (N)
8-Lead SOIC_N (R)
8-Lead MSOP (RM)
5-Lead SOT-23 (RJ)
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range (N, R, RM, RJ)
Lead Temperature (Soldering 10 sec)
Rating
12.6 V
1.3 W
0.8 W
0.6 W
0.5 W
±V
S
± 0.5 V
±3.4 V
Observe Power
Derating Curves
−65°C to +125°C
300°C
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8031/AD8032 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Exceeding this limit temporarily can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8031/AD8032 are internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves shown in Figure 7.
2.0
8-LEAD PDIP
1.5
T
J
= +150°C
MAXIMUM POWER DISSIPATION (W)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1
8-LEAD SOIC
Specification is for the device in free air:
8-Lead PDIP: θ
JA
= 90°C/W.
8-Lead SOIC_N: θ
JA
= 155°C/W.
8-Lead MSOP: θ
JA
= 200°C/W.
5-Lead SOT-23: θ
JA
= 240°C/W.
1.0
8-LEAD MSOP
0.5
5-LEAD SOT-23
70
80
90
Figure 7. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. C | Page 6 of 20
01056-007
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60
AMBIENT TEMPERATURE (°C)
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