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2N5109 参数 Datasheet PDF下载

2N5109图片预览
型号: 2N5109
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 晶体晶体管射频微波放大器
文件页数/大小: 5 页 / 318 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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2N5109
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO(sus)
BVCER(sus)
ICEO
IEBO
Test Conditions
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector Cutoff Current
(VCE = 15 Vdc, IB = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Value
Min.
20
40
-
-
Typ.
-
-
-
-
Max.
-
-
20
100
Unit
Vdc
Vdc
µA
µA
(on)
HFE
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 15.0 Vdc)
5
40
-
-
-
120
-
-
DYNAMIC
Symbol
f
T
Test Conditions
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Value
Min.
-
Typ.
1200
Max.
-
Unit
MHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.