欢迎访问ic37.com |
会员登录 免费注册
发布采购

2N5109 参数 Datasheet PDF下载

2N5109图片预览
型号: 2N5109
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 晶体晶体管射频微波放大器
文件页数/大小: 5 页 / 318 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号2N5109的Datasheet PDF文件第1页浏览型号2N5109的Datasheet PDF文件第2页浏览型号2N5109的Datasheet PDF文件第4页浏览型号2N5109的Datasheet PDF文件第5页  
2N5109
FUNCTIONAL
Symbol
Test Conditions
Maximum Unilateral Gain (1)
Maximum Available Gain
Insertion Gain
IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
Value
Min.
-
-
9.5
Typ.
12
11.2
10.5
Max.
-
-
-
Unit
dB
dB
dB
G
U max
MAG
2
|S
21
|
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA
f
S11
(MHz)
100
200
300
400
500
600
700
800
900
1000
|S11|
.082
.255
.288
.298
.368
.404
.462
..
.503
.593
.655
∠φ
167
172
132
137
126
121
116
110
105
95
S21
|S21|
6.77
3.56
2.39
1.91
1.61
1.38
1.28
1.21
1.11
1.02
∠φ
87
71
61
50
41
33
27
18
12
9.8
S12
|S12|
.073
.135
.217
.271
.320
.390
.477
.513
.535
.604
∠φ
79
71
70
62
55
54
48
38
33
35
S22
|S22|
.347
.259
.247
.216
.172
.174
.163
.190
.246
.320
∠φ
-30
-35
-46
-76
-94
-115
-145
176
140
122
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.