ATF-531P8 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
I
GS
P
diss
P
in max.
T
CH
T
STG
θ
ch_b
Parameter
Drain–Source Voltage
[2]
Gate–Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Gate Current
Total Power Dissipation
[3]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
[4]
Units
V
V
V
mA
mA
W
dBm
°C
°C
°C/W
Absolute
Maximum
7
-5 to 1
-5 to 1
300
20
1
+24
150
-65 to 150
63
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureT
B
is 25°C.
Derate 16 mW/°C for T
B
> 87°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +24 dBm RF Input
Power provided IGS is limited to 20mA. IGS
at P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA
[5,6]
400
0.9 V
300
0.8 V
180
150
120
90
60
-3 Std
+3 Std
Cpk = 1.0
Stdev = 0.14
160
Cpk = 1.2
Stdev = 0.71
120
I
DS
(mA)
200
0.7 V
80
-3 Std
+3 Std
100
0.6 V
40
30
0.5 V
0
0
1
2
3
4
5
6
7
V
DS
(V)
0
0
0
0.3
0.6
NF (dB)
0.9
1.2
35
36
37
38
OIP3 (dBm)
39
40
41
Figure 1. Typical I-V Curves
(Vgs = 0.1 per step).
Figure 2. NF
Nominal = 0.6, USL = 1.0.
Figure 3. OIP3
LSL = 35.5, Nominal = 38.1.
300
250
200
150
100
50
0
18.5
-3 Std
+3 Std
Cpk = 2.0
Stdev = 0.21
240
Stdev = 0.12
200
160
120
80
40
0
24.2
-3 Std
+3 Std
19.5
GAIN (dB)
20.5
21.5
24.4
24.6
24.8
25
25.2
P1dB (dBm)
Figure 4. Small Signal Gain
LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.
Figure 5. P1dB
Nominal = 24.6.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
2
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
