AWT6123
Table 4: Electrical Characteristics for GSM850/900
Unless otherwise specified:V
CC
= 3.5V, P
IN
= 5.5dBm, V
REG_GSM
= 2.8V, V
APC_GSM
= 2.2V, Z
IN
= Z
OUT
= 50Ω, T
C
= 25 °C
V
REG_DCS/PCS
= V
APC_DCS/PCS
= 0V, Pulse Width =1154µs
PARAMETER
Operating Frequency
Input Power
GSM850 Band (824 to 849MHz)
Output Power
Efficiency GSM850 Class 4
Efficiency GSM850 Class 5
Degraded Output Power
GSM900 Band (880 to 915MHz)
Output Power
Efficiency GSM900 Class 4
Degraded Output Power
All Bands
Isolation
Cross Isolation
Harmonics (2-14F)
Stability
SYMBOL
F
IN
P
IN
CONDITIONS
MIN
824
880
3
TYP
MAX
849
915
UNIT
MHz
MHz
dBm
5.5
8
P
MAX
PAE
PAE
P
OUT
= P
MAX
P
OUT
= 31.5dBm
V
CC
= 3.0V, V
REG
= 2.7V,
T
C
= 85°C, P
IN
= 3dBm
34.5
45
35
50
35
dBm
%
%
dBm
32.5
P
MAX
PAE
P
OUT
= P
MAX
V
CC
= 3.0V, V
REG
= 2.7V,
T
C
= 85°C, P
IN
= 3dBm
34.5
50
32.5
35
55
dBm
%
dBm
V
APC
= 0.45V, P
IN
= 8dBm
2*F
IN
at DCS/PCS_OUT
port, DCS/PCS PA = OFF
V
APC
= 0.45 to 2.2V
All V
APC
, All V
CC
, All V
REG
,
T
C
= -20 to 85°C,
VSWR = 8:1 All phases
All V
APC
, All V
CC
, All V
REG
,
T
C
= -20 to 85°C, All phases
RBW=VBW=100kHz,
P
IN
= 3.0 to 8dBm,
F
IN
= 915MHz,
F
OUT
= F
IN
+ 10 to 20MHz
10:1
-35
-30
-20
dBm
dBm
dBm
dBm
-12
-7
-36
Ruggedness
ratio
-70
dBm
RX Band Noise Power
RBW=VBW=100kHz,
P
IN
= 3.0 to 8dBm,
F
IN
= 849 or 915MHz,
F
OUT
= F
IN
+ 20 to 45MHz
Input Return Loss
P
OUT
= 5dBm to P
MAX
-82
dBm
2.5:1
4
Advanced Product Information - Rev 0.7
02-2003
ANADIGICS [ ANADIGICS, INC ]
