AO3415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
-8V
35
-3.0V
30
-2.5V
25
-I
D
(A)
20
15
10
5
0
0
2
3
4
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
V
GS
=-1.5V
0
0
1
1.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
0.5
2
-2.0V
-I
D
(A)
9
12
-4.5V
15
V
DS
=-5V
6
3
125°C
25°C
100
V
GS
=-1.5V
80
R
DS(ON)
(mΩ)
Ω
Normalized On-Resistance
1.60
I
D
=-4A, V
GS
=-4.5V
1.40
I
D
=-4A, V
GS
=-2.5V
60
V
GS
=-1.8V
40
V
GS
=-2.5V
V
GS
=-4.5V
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.20
I
D
=-2A, V
GS
=-1.8V
1.00
0.80
0
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
50
120
I
D
=-4A
100
R
DS(ON)
(mΩ)
Ω
1.0E+01
1.0E+00
1.0E-01
-I
S
(A)
80
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
60
125°C
40
25°C
20
0
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 7: Sep 2011
www.aosmd.com
Page 3 of 5
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
