AO3415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-4A
Capacitance (pF)
1400
1200
1000
C
iss
800
600
400
200
0
0
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
0
0
C
rss
10
15
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
4
-V
GS
(Volts)
3
2
1
C
oss
100.0
1000
10µs
10.0
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100
-I
D
(Amps)
R
DS(ON)
limited
100µs
1ms
10ms
DC
100ms
1.0
10
0.1
T
J(Max)
=150°C
T
A
=25°C
0.0
0.01
0.1
1
10
10s
1
0.00001
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.001
0.1
10
1000
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=100°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
P
D
T
on
T
10
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 7: Sep 2011
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
