AO4459
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
8
1000
800
600
400
200
0
VDS=-15V
ID=-6.5A
Ciss
6
4
Coss
2
Crss
0
0
3
6
9
12
15
0
5
10
15
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
1
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
100µs
RDS(ON)
limited
1ms
10ms
TJ(Max)=150°C
TA=25°C
100ms
DC
1s
10s
0.1
0.001
0.01
0.1
1
10
100
1000
IF=-6.5A, dI/dt=100A/µs
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DODES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
