PB5006 thru PB5010
General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
(1)
Reverse current per diode
(2)
Typical junction capacitance per diode
TEST CONDITIONS
I
F
= 22.5 A
rated V
R
4.0 V, 1 MHz
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F
I
R
C
J
TYP.
1.00
0.90
-
170
162
MAX.
1.10
1.00
10
500
-
UNIT
V
µA
pF
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: 10 ms pulse width
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Notes
(1)
With heatsink
(2)
Without heatsink, free air
SYMBOL
R
JC
(1)
R
JA
(2)
PB5006
PB5008
0.7
18
PB5010
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
PB5006-E3/45
UNIT WEIGHT (g)
7.62
PREFERRED PACKAGE CODE
45
BASE QUANTITY
20
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
50
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
T
C
Measurement
With
Heatsink
Sine-Wave, R-Load
5
Average Forward Rectified Current (A)
Average Forward Output Current (A)
4
3
2
Without
Heatsink
Sine-Wave, R-Load
Free Air, T
A
1
0
0
25
50
75
100
125
150
Case Temperature (°C)
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Forward Current Derating Curve
ASEMI [ 台湾ASEMI ]
