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AS28C010CW-25 参数 Datasheet PDF下载

AS28C010CW-25图片预览
型号: AS28C010CW-25
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 EEPROM EEPROM存储器5伏,可变字节 [128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable]
分类和应用: 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 14 页 / 301 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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EEPROM  
AS28C010  
Austin Semiconductor, Inc.  
Figure 1: Status BitAssignment  
FUNCTIONAL DESCRIPTION  
I/O  
DP  
TB  
5
4
3
2
1
0
READ  
Read operations are initiated by both OE\ and CE\ LOW.  
The read operation is terminated by either CE\ or OE\ returning  
HIGH. This two line control architecture eliminates bus  
contention in a system environment. The data bus will be in a  
high impedance state when either OE\ or CE\ is HIGH.  
RESERVED  
TOGGLE BIT  
DATA\ POLLING  
DATA\ POLLING  
The AS28C010 features DATA\ Polling as a method to  
indicate to the host system that the byte write or page write  
cycle has completed. DATA\ Polling allows a simple bit test  
operation to determine the status of theAS28C010, eliminating  
additional interrupt inputs or external hardware. During the  
internal programming cycle, any attempt to  
read the last byte written will produce the complement of that  
data on I/O7 (i.e., write data = 0xxx xxxx, read data = 1xxx xxxx).  
Once the programming cycle is complete, I/O7 will reflect true  
data. Note: If the AS28C010 is in the protected state and an  
illegal write operation is attempted DATA\ Polling will not  
operate.  
WRITE  
Write operations are initiated when both CE\ and WE\ are  
LOW and OE\ is HIGH. The AS28C010 supports both a CE\  
and WE\ controlled write cycle. That is, the address is latched  
by the falling edge of either CE\ or WE\, whichever occurs last.  
Similarly, the data is latched internally by the rising edge of  
either CE\ or WE\, whichever occurs first. A byte write  
operation, once initiated, will automatically continue to  
completion, typically within 5ms.  
PAGE WRITE  
The page write feature of the AS28C010 allows the entire  
memory to be written in 5 seconds. Page write allows two to  
two hundred fifty-six bytes of data to be consecutively written  
to the AS28C010 prior to the commencement of the internal  
programming cycle. The host can fetch data from another  
device within the system during a page write operation (change  
the source address), but the page address (A8 through A16)  
for each subsequent valid write cycle to the part during this  
operation must be the same as the initial page address.  
TOGGLE BIT  
The AS28C010 also provides another method for  
determining when the internal write cycle is complete. During  
the internal programming cycle, I/O6 will toggle from HIGH to  
LOW and LOW to HIGH on subsequent attempts to read the  
device. When the internal cycle is complete the toggling will  
cease and the device will be accessible for additional read or  
write operations.  
The page write mode can be initiated during any write  
operation. Following the initial byte write cycle, the host can  
write an additional one to two hundred fifty six bytes in the  
same manner as the first byte was written. Each successive  
byte load cycle, started by the WE\ HIGH to LOW transition,  
must begin within 100µs of the falling edge of the preceding  
WE\. If a subsequent WE\ HIGH to LOW transition is not  
detected within 100µs, the internal automatic programming cycle  
will commence. There is no page write window limitation.  
Effectively the page write window is infinitely wide, so long as  
the host continues to access the device within the byte load  
cycle time of 100µs.  
WRITE  
The AS28C010 provides the user two write operation  
status bits. These can be used to optimize a system write cycle  
time. The status bits are mapped onto the I/O bus as shown in  
Figure 1.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS28C010  
Rev. 1.5 5/06  
3