EEPROM
AS28C010
Austin Semiconductor, Inc.
CAPACITANCE TA=+25oC, f= 1MHZ, VCC=5V
PARAMETER
SYMBOL
MAX
UNITS
Test Conditions
(2)
CIN
VIN=0V
Input Capacitance
10
pF
(2)
VI/O=0V
Input / Output Capactiance
10
pF
CI/O
POWER-UP TIMING
Symbol
(2)
tPUR
Parameter
Max.
Units
Ps
Power-up to Read Operation
Power-up to Write Operation
100
(2)
tPUW
5
ms
ENDURANCE AND DATA RETENTION
MODE SELECTION
Parameter
Min.
10,000
100,000
100
Max.
Units
CE\
OE\
WE\
I/O
MODE
READ
Endurance
Cycles Per Byte
Cycles Per Page
Years
V
V
V
D
OUT
IL
IL
IH
Endurance
Data Retention
STANDBY
WRITE
V
X
X
High-Z
IH
V
V
V
D
IL
IH
IL
IN
DESELECT
V
V
V
High-Z
IL
IH
IH
A.C. CONDITIONS OF TEST
WRITE
V
X
X
X
---
---
IH
Input Pulse Levels
0V to 3V
10ns
INHIBIT
V
X
Input Rise and Fall Times
Input and Output Timing Levels
IL
1.5V
DATA
Data Out
(I/O7)
V
V
V
POLLING
IL
IL
IH
EQUIVALENT A.C. LOAD CURRENT
SYMBOL TABLE
Notes: (2) This parameter is periodically sampled and not 100% tested.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS28C010
Rev. 1.5 5/06
5
AUSTIN [ AUSTIN SEMICONDUCTOR ]
