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AP2126_09 参数 Datasheet PDF下载

AP2126_09图片预览
型号: AP2126_09
PDF下载: 下载PDF文件 查看货源
内容描述: 300毫安高速,极低的噪声CMOS LDO稳压器 [300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR]
分类和应用: 稳压器
文件页数/大小: 12 页 / 612 K
品牌: BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
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Data Sheet  
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR  
AP2126  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Input Voltage  
VIN  
6.5  
V
Shutdown Input Voltage  
VCE  
IOUT  
TJ  
-0.3 to VIN+0.3  
V
Output Current  
450  
150  
mA  
oC  
oC  
oC  
Junction Temperature  
Storage Temperature Range  
Lead Temperature (Soldering, 10sec)  
Thermal Resistance (Junction to Ambient)  
TSTG  
TLEAD  
θJA  
-65 to 150  
260  
oC/W  
V
250  
ESD (Human Body Model)  
ESD (Machine Model)  
ESD  
ESD  
6000  
250  
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated  
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods  
may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Max  
Unit  
Input Voltage  
VIN  
3.0  
6
V
oC  
Operating Ambient Temperature Range  
TA  
-40  
85  
Sep. 2012 Rev. 1. 5  
BCD Semiconductor Manufacturing Limited  
4