Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Electrical Characteristics
(AP2126-ADJ, VIN min=3.0V, CIN=1μF, COUT=1μF, Bold typeface applies over -40oC
≤TA≤
85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VIN=3.0V
VREF
Reference Voltage
1.225
1.25
1.275
V
1mA≤IOUT≤300mA
Input Voltage
VIN
3.0
6
V
VIN=3.0V,
IOUT(MAX)
Maximum Output Current
300
400
mA
VOUT=98%×VOUT
ΔVOUT
/(ΔIOUT*VOUT
VIN=3.0V,
Load Regulation
0.6
%/A
)
1mA≤IOUT≤300mA
ΔVOUT
/(ΔVIN*VOUT
VIN=3.0V to 6V
Line Regulation
Quiescent Current
Standby Current
0.06
90
%/V
μA
)
IOUT=30mA
IQ
VIN=3.0V, IOUT=0mA
60
VIN=3.0V,
ISTD
0.1
1.0
μA
VSHUTDOWN in off mode
f=100Hz
68
68
54
dB
dB
dB
Ripple 1Vp-p
VIN=3.5V
Power Supply
Rejection Ratio
PSRR
f=1KHz
f=10KHz
(ΔVOUT/VOUT
)
Output Voltage
Temperature Coefficient
≤TA≤
IOUT=30mA, -40oC 85oC
ppm/oC
±100
/ΔT
Short Current Limit
Soft Start Time
ISHORT
tUP
VOUT=0V
50
50
mA
μs
TA=25oC, 10Hz ≤f≤100kHz,
VOUT=1.25V
VNOISE
RMS Output Noise
80
μVrms
Shutdown "High" Voltage
Shutdown "Low" Voltage
Shutdown input voltage "High"
Shutdown input voltage "Low"
1.5
0
6
V
V
0.4
V
OUT Discharge MOSFET
Shutdown input voltage "Low"
60
3
Ω
RDS(ON)
Shutdown Pull Down Resis-
tance
MΩ
oC
oC
Thermal Shutdown
165
30
Thermal Shutdown Hysteresis
Thermal Resistance
oC/W
θJC
SOT-23-5
150
Sep. 2012 Rev. 1. 5
BCD Semiconductor Manufacturing Limited
5
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
