Preliminary Datasheet
2A CMOS LDO REGULATOR
AP2132B
Electrical Characteristics
VIN = VOUT +0.5V, VCTRL= VEN =5V, TA=25oC, CIN=COUT=10µF, CCTRL=1µF, IOUT=10mA, Bold typeface
applies -40 oC≤TA≤85 oC unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ Max
Unit
VIN = VOUT+0.5V,
VOUT
×
VOUT ×
Output Voltage
VOUT
V
IOUT =10mA
98%
102%
Input Voltage
Current Limit
Load Regulation
VIN
ILimit
1.4
3
5.5
V
A
VIN – VOUT = 1V
VRLOAD
VIN=VOUT +0.5V, 10mA≤IOUT≤2A
10
2
mV
VOUT + 0.5V≤VIN≤5V ,
IOUT = 10mA
Line Regulation
VRLINE
mV
IOUT =500mA
IOUT =1A
80
120
200
mV
mV
150
Dropout Voltage
VDROP
IOUT =2A
300
450
mV
Supply Current
VCTRL Current
ISUPPLY
VIN=VOUT+0.5V, IOUT=0mA
300
250
µA
µA
ICTRLH
ICTRLL
VIN = VOUT+0.5V, VCTRL=VEN=5V
VIN=VOUT+0.5V, Vctrl= 5V, VEN=0V
500
1.0
0.1
60
60
µA
dB
dB
f=100Hz
f=1kHz
Power Supply
Rejection Ratio
Ripple 0.5Vp-p,
VIN=VOUT+1V
PSRR
Output Voltage
Temperature
Coefficient
OUT=10mA, -40 oC≤TA≤85oC
±100
0.8
ppm/ oC
△VOUT
I
VOUT×△T
Reference Voltage
VREF
Adjust Short to VOUT
0.784
1.2
0.816
0.4
V
V
Enable
“High”
Enable Input Voltage “High”
Voltage
Enable
“Low”
Enable Input Voltage “Low”
V
Voltage
Thermal Shutdown
OTSD
VTHPG
165
20
oC
Thermal Shutdown
Hysteresis
oC
VOUT Power
Good Voltage
92
7
%
%
VPG Hysteresis
Adjust
Threshold
Pin
200
mV
Thermal Resistance
(Junction to Case)
PSOP-8
40
ºC/W
θJC
Oct. 2010 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
6
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
