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AP2302D 参数 Datasheet PDF下载

AP2302D图片预览
型号: AP2302D
PDF下载: 下载PDF文件 查看货源
内容描述: 3A DDR终端稳压器 [3A DDR TERMINATION REGULATOR]
分类和应用: 稳压器双倍数据速率
文件页数/大小: 13 页 / 154 K
品牌: BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
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Preliminary Datasheet  
3A DDR TERMINATION REGULATOR  
AP2302  
Absolute Maximum Ratings (Note 1)  
Value  
Parameter  
Symbol  
VCNTL  
PD  
Unit  
Supply Voltage for Internal Circuit  
Power Dissipation  
7
V
Internally Limited  
W
ESD (Human Body Model)  
Junction Temperature  
ESD  
TJ  
2
KV  
oC  
oC  
oC  
150  
TSTG  
Storage Temperature Range  
-65 to 150  
260  
TLEAD  
Lead Temperature (Soldering, 10sec)  
SOIC-8  
160  
130  
90  
oC/W  
θJA  
Package Thermal Resistance (Free Air)  
TO-252-5L  
TO-263-5L  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated  
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods  
may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
VCNTL (Note 2, 3)ꢀ  
Supply Voltage for Internal Circuit  
3.3  
6
V
DDR I  
2.5  
1.8  
VIN  
TJ  
VCNTL  
Power Input  
1.6  
0
V
DDR II  
oC  
Junction Temperature  
125  
Note 2: Keep VCNTL VIN in power on and power off sequences.  
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
4