Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Electrical Characteristics
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.)
Parameter
Symbol
Conditions
IL=0A (Note 4)
Min
Typ
0
Max Unit
Output Offset Voltage
VOS
-20
20
2
mV
IL=0 to 1.5A
0.8
0.8
1.2
1.2
3
DDR I
IL=0 to -1.5A
IL=0 to 1.5A
2
Load
Regulation
%
∆VOUT
/
3
VOUT
DDR II
IL=0 to -1.5A
No Load
3
Quiescent Current of VCNTL
Leakage Current in Shutdown Mode
Protection
IQ
5
mA
ISHDN
VREFEN<0.2V, RL=180Ω
3
6
µA
Current Limit
ILIMIT
3
A
oC
oC
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Shutdown Function
TSHDN
3.3V≤VCNTL≤5V
150
50
Output=High
Output=Low
0.8
Shutdown Threshold Trigger
V
0.2
Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN
.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
