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BL7442LV 参数 Datasheet PDF下载

BL7442LV图片预览
型号: BL7442LV
PDF下载: 下载PDF文件 查看货源
内容描述: 低压智能2K位EEPROM [Low voltage Intelligent 2K bits EEPROM]
分类和应用: 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 10 页 / 305 K
品牌: BELLING [ SHANGHAI BELLING CO., LTD. ]
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BL7442LV Low voltage
Intelligent 2K bits EEPROM
Command
1
CLK
2
3
4
23
24
IFD sets I/O to State L
I/O
START
From IFD
CLK
td1
tBUF
I/O
tF
td7
STOP
From IFD
tR
td5
td8
td3
tL
Figure 4 Command Mode
After the reception of a command there are two possible modes:
--Outgoing data mode for reading
--Processing mode for writing and erasing
(3) Outgoing Data Mode
In this mode the IC sends data to the IFD. Figure 5 shows the timing diagram. The first bit becomes
valid on I/O after the first falling edge on CLK. After the last data bit an additional clock pulse is necessary in
order to set I/O to state H and to prepare the IC for a new command entry. During this mode any start and
stop condition is discarded.
Command
CLK
1
2
3
4
n-1
n
IC sets I/O to State H
I/O
1
Start of Outgoing Data
2
3
n-1
n
Figure 5 Outgoing Data Mode
(4) Processing Mode
In this mode the IC processes internally. Figure 6 shows the timing diagram. The IC has to be clocked
continuously until I/O which was switched to state L after the first falling edge of CLK is set to state H. Any
start and stop condition id discarded during this mode.
CLK
I/O
1
2
3
n-1
n
Start of
Processing
td2
td2
End of
Processing
Figure 6 Processing Mode
http://www.belling.com.cn
-4-
Total
10 Pages
8/16/2006