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BL7442LV 参数 Datasheet PDF下载

BL7442LV图片预览
型号: BL7442LV
PDF下载: 下载PDF文件 查看货源
内容描述: 低压智能2K位EEPROM [Low voltage Intelligent 2K bits EEPROM]
分类和应用: 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 10 页 / 305 K
品牌: BELLING [ SHANGHAI BELLING CO., LTD. ]
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BL7442LV Low voltage
Intelligent 2K bits EEPROM
Figure 8 Verification Procedure
Reset Modes
(1) Power-on-Reset
After connecting the operating voltage to VCC ,I/O is state H. By all means, a read access to an
address or an Answer-to-Reset must be carried out before data can be altered.
(2) Break
If RST is set to high during CLK in state L any operation is aborted and I/O is switched to state H.
Minimum duration of Tres=5us is necessary to trigger a defined valid reset(figure 9).After Break
the chip is ready for further operations.
RST
t
RCS
t
d9
CLK
I/O
Figure 9 Break
Failures
Behavior in case of failures:
In case of one of the following failures, the chip sets the I/O to state H after 8 clock pulses at the
latest.
Possible failures:
--Comparison unsuccessful
--Wrong command
--Wrong number of command clock pulses
--Write/erase access to already protected bytes
http://www.belling.com.cn
-7-
Total
10 Pages
8/16/2006