BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD543
V
(BR)CEO
I
C
= 30 mA
(see Note 4)
V
CE
= 40 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
I
CEO
I
EBO
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
5V
4V
4V
4V
0.3 A
1A
1.6 A
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 1 A
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
3A
5A
3A
5A
8A
5A
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
(see Notes 4 and 5)
(see Notes 4 and 5)
60
40
15
0.5
0.5
1
1.4
V
V
I
B
= 0
BD543A
BD543B
BD543C
BD543
BD543A
BD543B
BD543C
BD543/543A
BD543B/543C
MIN
40
60
80
100
0.4
0.4
0.4
0.4
0.7
0.7
1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.5 A
I
C
= 0.5 A
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.79
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 6 A
V
BE(off)
= -4 V
I
B(on)
= 0.6 A
R
L
= 5
Ω
†
MIN
I
B(off)
= -0.6 A
t
p
= 20 µs, dc
≤
2%
TYP
0.6
1
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
