BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
h
FE
- DC Current Gain
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
1000
TCS633AI
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
TCS633AE
I
C
= 300 mA
I
C
= 1 A
I
C
= 3 A
I
C
= 6 A
1·0
100
10
0·1
1·0
0·1
1·0
I
C
- Collector Current - A
10
0·01
0·001
0·01
0·1
I
B
- Base Current - A
1·0
10
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·2
V
CE
= 4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
1·1
TCS633AF
1·0
0·9
0·8
0·7
0·6
0·1
1·0
I
C
- Collector Current - A
10
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
