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BUL770 参数 Datasheet PDF下载

BUL770图片预览
型号: BUL770
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管 [NPN SILICON POWER TRANSISTOR]
分类和应用: 晶体晶体管功率双极晶体管开关局域网
文件页数/大小: 6 页 / 124 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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BUL770
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
CEO(sus)
I
CES
I
EBO
V
BE(sat)
V
CE(sat)
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
transfer ratio
Collector-base forward
bias diode voltage
I
C
= 100 mA
V
CE
= 700 V
V
CE
= 700 V
V
EB
=
9V
TEST CONDITIONS
L = 25 mH
V
BE
= 0
V
BE
= 0
I
C
= 0
I
C
= 800 mA
I
C
= 800 mA
I
C
= 800 mA
I
C
= 800 mA
I
C
=
10 mA
I
C
= 800 mA
I
C
= 3.2 A
(see Notes 4 and 5)
T
C
= 90°C
(see Notes 4 and 5)
T
C
= 90°C
10
7
2
0.83
0.75
0.18
0.22
18.5
14.5
7.5
870
21
14
mV
0.25
T
C
= 90°C
(see Note 3)
MIN
400
10
200
1
0.9
TYP
MAX
UNIT
V
µA
mA
V
V
I
B
= 160 mA
I
B
= 160 mA
I
B
= 160 mA
I
B
= 160 mA
V
CE
=
V
CE
=
V
CE
=
1V
1V
5V
h
FE
V
FCB
I
CB
= 60 mA
NOTES: 3. Inductive loop switching measurement.
4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
PARAMETER
R
θJA
R
θJC
Junction to free air thermal resistance
Junction to case thermal resistance
MIN
TYP
MAX
62.5
2.5
UNIT
°C/W
°C/W
inductive-load switching characteristics at 25°C case temperature
PARAMETER
t
sv
t
fi
t
xo
t
sv
t
fi
Storage time
Current fall time
Cross over time
Storage time
Current fall time
I
C
= 800 mA
L = 1 mH
I
C
= 800 mA
L = 1 mH
TEST CONDITIONS
I
B(on)
= 160 mA
I
B(off)
= 320 mA
I
B(on)
= 160 mA
I
B(off)
= 100 mA
V
CC
= 40 V
V
CLAMP
= 300 V
V
CC
= 40 V
V
CLAMP
= 300 V
MIN
TYP
2.5
150
300
4.3
140
MAX
3
190
400
5
200
UNIT
µs
ns
ns
µs
ns
resistive-load switching characteristics at 25°C case temperature
PARAMETER
t
sv
t
fi
Storage time
Current fall time
I
C
= 800 mA
V
CC
= 300 V
TEST CONDITIONS
I
B(on)
= 160 mA
I
B(off)
= 160 mA
MIN
TYP
2.5
150
MAX
3.4
250
UNIT
µs
ns
2
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP