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BD616LV4017ECP55 参数 Datasheet PDF下载

BD616LV4017ECP55图片预览
型号: BD616LV4017ECP55
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 256K ×16位 [Very Low Power/Voltage CMOS SRAM 256K X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 267 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
PARAMETER
Terminal Voltage
Respect to GND
with
BS616LV4017
OPERATING RANGE
UNITS
V
O
O
RATING
-0.5 to
Vcc+0.5
-40 to +85
-60 to +150
1.0
20
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to +70
-40
O
O
Vcc
2.4V ~ 5.5V
2.4V ~ 5.5V
C
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
C
C
C to +85
O
C
W
mA
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
C
IN
C
DQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
V
IN
=0V
V
I/O
=0V
6
8
pF
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
PARAMETER
NAME
V
IL
PARAMETER
Guaranteed Input Low
Voltage
(2)
Guaranteed Input High
Voltage
(2)
Input Leakage Current
Output Leakage Current
Output Low Voltage
TEST CONDITIONS
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
MIN. TYP.
(1)
MAX.
-0.5
2.0
2.2
--
--
--
2.4
2.4
--
--
--
--
--
0.8
0.8
Vcc+0.3
UNITS
V
V
IH
I
IL
I
LO
V
OL
--
V
uA
uA
V
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE = V
IH
, or OE,= V
IH
V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2.0mA
Vcc=3.0V
Vcc=5.0V
1
1
0.4
0.4
--
22
55
0.5
V
OH
(5)
Output High Voltage
Operating Power
Supply Current
Standby Current-TTL
(4)
Vcc = Min, I
OH
= -1.0mA
CE=V
IL
,I
DQ
= 0mA,
F=Fmax
(3)
Vcc=3.0V
Vcc=5.0V
--
V
I
CC
70ns
70ns
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
--
mA
I
CCSB
CE = V
IH
, I
DQ
= 0mA
Vcc=5.0V
--
Vcc=3.0V
Vcc=5.0V
--
0.45
2.0
mA
1.0
10
60
uA
I
CCSB1
Standby Current-CMOS
CE
Vcc-0.2V,
V
IN
Vcc - 0.2V or V
IN
≦0.2V
--
1. Typical characteristics are at T
A
= 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
4. Icc
SB1_MAX.
is 5uA/30uA at Vcc=3.0V/5.0V and T
A
=70
o
C.
5. Icc_
MAX
. is 27mA(@3.0V)/65mA(@5.0V) under 55ns operation.
R0201-BS616LV4017
3
Revision 2.1
Jan.
2004