BH616UV8011
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
OPERATING RANGE
UNITS
V
O
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5
(2)
RANG
Industrial
AMBIENT
TEMPERATURE
-40 C to + 85 C
O
O
V
CC
1.65V ~ 3.6V
to 4.6V
-40 to +125
-60 to +150
1.0
20
C
C
O
CAPACITANCE
(1)
(T
A
= 25
O
C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
W
mA
C
IN
Input
Capacitance
Input/Output
Capacitance
V
IN
= 0V
V
I/O
= 0V
6
8
pF
pF
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns
C
IO
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS (T
A
= -40
O
C to +85
O
C)
PARAMETER
NAME
V
CC
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
I
CC1
I
CCSB
I
CCSB1
PARAMETER
Power Supply
V
CC
=1.8V
V
CC
=3.6V
TEST CONDITIONS
MIN.
1.65
(2)
TYP.
(1)
--
MAX.
3.6
0.4
0.6
V
CC
+0.3
(3)
UNITS
V
Input Low Voltage
-0.3
--
V
Input High Voltage
V
IN
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
V
I/O
= 0V to V
CC
,
Output Leakage Current
V
CC
=1.8V
V
CC
=3.6V
1.4
2.2
--
--
V
Input Leakage Current
--
1
uA
CE1 = V
IH
or CE2 = V
IL
or OE = V
IH
or
UB = LB = V
IH
V
CC
= Max, I
OL
= 0.2mA
V
CC
= Max, I
OL
= 2.0mA
V
CC
= Min, I
OH
= -0.1mA
V
CC
= Min, I
OH
= -1.0mA
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = F
MAX
(4)
--
--
1
0.2
0.4
--
8
12
1.5
2.0
0.5
1.0
12
15
uA
Output Low Voltage
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
--
V
CC
-0.2
2.4
--
--
V
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current – TTL
--
6
8
1.0
1.5
--
2.0
2.5
(5)
V
mA
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = 1MHz
CE1 = V
IH
, or CE2 = V
IL
,
I
DQ
= 0mA
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
--
mA
--
mA
Standby Current – CMOS
O
--
uA
1. Typical characteristics are at T
A
=25 C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
RC.
5. V
CC
=3.0V
R0201-BH616UV8011
3
Revision
1.2
Oct.
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
