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BH616UV8011DIP70 参数 Datasheet PDF下载

BH616UV8011DIP70图片预览
型号: BH616UV8011DIP70
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX16, 70ns, CMOS, ROHS COMPLIANT, DIE PACKAGE]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 11 页 / 233 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH616UV8011
READ CYCLE 2
(1,3,4)
CE1
t
ACS1
CE2
t
ACS2
(6)
t
CLZ
(5,6)
t
CHZ
(5, 6)
D
OUT
READ CYCLE 3
(1, 4)
t
RC
ADDRESS
t
AA
OE
t
OE
CE1
t
CLZ1
(5)
CE2
t
CLZ2
(5)
LB, UB
t
OLZ
t
ACS1
t
CHZ
(1,5)
t
OHZ
(5)
t
OH
t
ACS2
t
BA
t
BE
t
CHZ2
(2,5)
t
BDO
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2= V
IH
.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BH616UV8011
6
Revision
1.2
Oct.
2008