BSI
TRUTH TABLE
MODE
CE1
H
Fully Standby
X
Output Disable
L
L
H
H
H
X
CE2
X
X
X
X
X
X
L
Read from SRAM
( WORD mode )
L
H
L
H
H
H
L
L
Write to SRAM
( WORD mode )
L
H
X
L
H
H
L
Read from SRAM
L
( BYTE Mode )
Write to SRAM
L
( BYTE Mode )
H
X
L
L
X
X
A-1
H
L
H
L
X
X
A-1
L
L
X
X
X
H
L
L
H
X
X
OE
WE
CIO
LB
X
UB
X
X
SAE
BS616LV2025
D0~7
D8~15
VCC Current
High-Z
High-Z
I
CCSB
, I
CCSB1
High-Z
Dout
High-Z
Dout
Din
X
Din
Dout
High-Z
High-Z
Dout
Dout
X
Din
Din
High-Z
I
CC
I
CC
I
CC
I
CC
Din
X
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
OPERATING RANGE
UNITS
V
O
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5 to
Vcc+0.5
-40 to +125
-60 to +150
1.0
20
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
4.5V ~ 5.5V
4.5V ~ 5.5V
T
BIAS
T
STG
P
T
I
OUT
C
C
O
W
mA
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
C
IN
C
DQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
V
IN
=0V
V
I/O
=0V
6
8
pF
pF
1. This parameter is guaranteed and not 100% tested.
R0201-BS616LV2025
3
Revision 2.5
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
