BSI
DC ELECTRICAL CHARACTERISTICS
(TA = 0
o
C to +70
o
C)
PARAMETER
NAME
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
BS616LV2025
PARAMETER
Guaranteed Input Low
Voltage
(2)
Guaranteed Input High
Voltage
(2)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
TEST CONDITIONS
Vcc=5.0V
Vcc=5.0V
MIN. TYP.
(1)
MAX.
-0.5
2.2
--
--
--
2.4
--
--
--
--
--
--
--
--
0.8
Vcc+0.2
UNITS
V
V
uA
uA
V
V
mA
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE1 = V
IH
or CE2=V
IL
or OE = V
IH
,
V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2mA
Vcc = Min, I
OH
= -1mA
Vcc = Max, CE1= V
IL
, CE2=V
IH
I
DQ
= 0mA, F = Fmax
(3)
Vcc = Max, CE1 = V
IH
or CE2=V
IL
I
DQ
= 0mA
Vcc = Max, CE1
≧
Vcc-0.2V or
CE2
≦
0.2V,
Other inputs
≧
Vcc - 0.2V or
V
IN
≦
0.2V
Vcc=5.0V
Vcc=5.0V
Vcc=5.0V
1
1
0.4
--
40
I
CCSB
Vcc=5.0V
--
--
1
mA
I
CCSB1
Standby Current-CMOS
Vcc=5.0V
--
0.6
6
uA
1. Typical characteristics are at TA = 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
R0201-BS616LV2025
4
Revision 2.5
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
