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BS616LV2021AC 参数 Datasheet PDF下载

BS616LV2021AC图片预览
型号: BS616LV2021AC
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 128K ×16或256K ×8位切换 [Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 255 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
DC ELECTRICAL CHARACTERISTICS
(TA
= 0
o
C to +70
o
C)
PARAMETER
NAME
V
IL
V
IH
I
IL
I
OL
V
OL
V
OH
I
CC
BS616LV2021
PARAMETER
Guaranteed Input Low
Voltage
(2)
Guaranteed Input High
Voltage
(2)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
TEST CONDITIONS
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
MIN. TYP.
(1)
MAX.
-0.5
2.0
2.2
--
--
--
2.4
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.1
0.6
0.8
Vcc+0.2
UNITS
V
V
uA
uA
V
V
mA
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE1 = V
IH
or CE2=V
IL
or OE = V
IH
,
V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2mA
Vcc = Min, I
OH
= -1mA
Vcc = Max, CE1= V
IL
, CE2=V
IH
I
DQ
= 0mA, F = Fmax
(3)
Vcc = Max, CE1 = V
IH
or CE2=V
IL
I
DQ
= 0mA
Vcc = Max, CE1 Vcc-0.2V or
CE2 0.2V,
Other inputs Vcc - 0.2V or
V
IN
0.2V
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
1
1
0.4
--
20
40
0.5
1
0.7
I
CCSB
mA
I
CCSB1
Standby Current-CMOS
uA
6
1. Typical characteristics are at TA = 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
R0201-BS616LV2021
4
Revision 2.4
April 2002