欢迎访问ic37.com |
会员登录 免费注册
发布采购

NE4210S01-T1 参数 Datasheet PDF下载

NE4210S01-T1图片预览
型号: NE4210S01-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 超低噪声HJ FET [SUPER LOW NOISE HJ FET]
分类和应用: 晶体晶体管放大器
文件页数/大小: 7 页 / 252 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE4210S01-T1的Datasheet PDF文件第1页浏览型号NE4210S01-T1的Datasheet PDF文件第3页浏览型号NE4210S01-T1的Datasheet PDF文件第4页浏览型号NE4210S01-T1的Datasheet PDF文件第5页浏览型号NE4210S01-T1的Datasheet PDF文件第6页浏览型号NE4210S01-T1的Datasheet PDF文件第7页  
NE4210S01
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
DS
V
GS
I
DS
I
GS
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
mA
µA
mW
°C
°C
RATINGS
4.0
-3.0
I
DSS
100
165
125
-65 to +125
RECOMMENDED
OPERATING CONDITIONS
(T
A
= 25°C)
PART NUMBER
SYMBOLS
PARAMETERS
Drain to Source Voltage
V
DS
I
DS
Drain Current
P
IN
Input Power
NE4210S01
UNITS MIN TYP MAX
V
2
3
mA
10
15
dBm
0
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(GHz)
NF
MIN
(dB)
G
A
(dB)
20.7
18.7
17.0
15.4
14.1
13.0
12.3
11.8
11.2
MAG
0.94
0.80
0.66
0.50
0.38
0.29
0.27
0.33
0.39
Γ
OPT
ANG
12
26
44
68
97
133
177
-129
-82
Rn/50
0.38
0.33
0.26
0.18
0.11
0.09
0.08
0.11
0.23
TYPICAL MOUNT PAD LAYOUT
(Units in mm)
2.4 mm TYP
V
DS
= 2 V, I
D
= 10 mA
2.0
0.29
4.0
0.30
6.0
0.33
8.0
0.38
10.0
0.43
12.0
0.50
14.0
0.59
16.0
0.71
18.0
0.86
2.4 mm TYP
ORDERING INFORMATION
PART NUMBER
NE4210S01
NE4210S01-T1
NE4210S01-T1B
SUPPLY FORM
Bulk, min.
Tape & Reel 1000 pcs/reel
Tape & Reel 4000 pcs/reel
MARKING