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NE4210S01-T1 参数 Datasheet PDF下载

NE4210S01-T1图片预览
型号: NE4210S01-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 超低噪声HJ FET [SUPER LOW NOISE HJ FET]
分类和应用: 晶体晶体管放大器
文件页数/大小: 7 页 / 252 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE4210S01
TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
V
GS
= 0.00 V
-0.09 V
-0.18 V
40
-0.27 V
30
-0.36 V
-0.45 V
-0.54 V
10
(T
A
= 25°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
60
V
DS =2V
100
50
50
85
Drain Current, I
D
(mA)
Drain Current, I
D
(mA)
40
70
30
45
20
20
30
-0.63 V-
10
15
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
-1.20
0
-1.0
-0.8
-0.6
-0.4
-0.2
0
0.2
Drain to Source Voltage, V
DS
(V)
Gate to Source Voltage, V
GS
(V)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
Forward Insertion Gain, |S
21
S
|
2
(dB)
Total Power Dissipation, (P
T
) mW
200
20
MSG.
V
DS
= 2 V
I
D
= 10 mA
MAG.
16
150
100
12
|S
21S
|
2
50
8
4
0
50
100
150
200
250
1
2
4
6
8 10
14
20
30
Ambient Temperature, T
A
(°C)
Frequency, f (GHz)
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
24
V
DS
= 2 V
I
D
= 10 mA
NOISE FIGURE and ASSOCIATED
GAIN vs. DRAIN CURRENT
V
DS
= 2 V
f = 12 GHz
15
G
A
Associated Gain, G
A
(dB)
G
A
16
13
2.0
1.5
1.0
0.5
NF
12
11
1.0
12
0.5
NF
0
1
2
4
6
8 10
14
20
30
8
4
0
10
20
30
Frequency, f (GHz)
Drain Current, I
D
(mA)
Associated Gain, G
A
(dB)
20
14
Noise Figure, NF (dB)
Noise Figure, NF (dB)