PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON
RF POWER MOSFET FOR 1.9 GHZ NE5510179A
TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER:
29.5 dBm TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 22 dBm
• HIGH LINEAR GAIN:
11 dB TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 5dBm
• HIGH POWER ADDED EFFICIENCY:
50% TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 22 dBm
• SINGLE SUPPLY:
2.8 to 6.0 V
• SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
4.2 Max
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
1.5 – 0.2
Source
Source
5.7 Max
0.6 – 0.15
X
Gate
Drain
0.8 – 0.15
4.4 Max
Gate
1.0 Max
Drain
1.2 Max
0.8 Max
3.6 – 0.2
5.7 Max
8
0.4 – 0.15
DESCRIPTION
The NE5510179A is an N-Channel silicon power MOSFET
specially designed as the transmission driver amplifier for 3.5
V GSM1800 and GSM 1900 handsets. Dies are manufactured
using NEC's NEWMOS technology (NEC's 0.6
µm
WSi gate
lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.5 dBm output power with 50% power
added efficiency at 1.9 GHz under the 3.5 V supply voltage,
or can deliver 29 dBm output power at 2.8 V by varying the
gate voltage as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.5 V GSM 1800/GSM 1900 Class 1 Handsets
• OTHERS:
1.6 - 2.0 GHz TDMA Applications
ELECTRICAL CHARACTERISTICS
(T
A
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
GSS
I
DSS
V
TH
gm
R
DS (ON)
BV
DSS
CHARACTERISTICS
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain-to-Source On Resistance
Drain-to-Source Breakdown Voltage
V
= 25°C)
NE5510179A
79A
UNITS
nA
nA
V
S
MIN
TYP
0.9 – 0.2
MAX
100
100
0.2 – 0.1
TEST CONDITIONS
V
GSS
= 6.0 V
V
DSS
= 8.5 V
V
DS
= 3.5 V, I
DS
=
1 mA
V
DS
= 3.5 V, I
DS1
=
300 mA, I
DS2
=
500 mA
V
GS
= 6.0 V, V
DS
=
0.5 V
I
DSS
= 10 A
1.0
1.35
0.82
0.5
2.0
20
24
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
