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NE5510179A-T1 参数 Datasheet PDF下载

NE5510179A-T1图片预览
型号: NE5510179A-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 3.5 V工作电压硅射频功率MOSFET 1.9 GHZ发送放大器 [3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS]
分类和应用: 晶体放大器晶体管射频
文件页数/大小: 4 页 / 42 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE5510179A
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°C)
SYMBOLS
V
DS
V
GS
I
D
I
D
P
IN
P
T
T
CH
T
STG
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (continuous)
Drain Current (Pulse Test)
2
Input Power
3
Total Power Dissipation
Channel Temperature
Storage Temperature
A
dBm
W
°C
°C
UNITS
V
V
RATINGS
8.5
6
A0.5
1.0
27
1.6
125
-55 to +125
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
V
DS
V
GS
I
DS
P
IN
freq
T
OP
PARAMETERS
Drain to Supply Voltage
Gate Supply Voltage
Drain Current (Pulse Test)
1
Input Power
2
Operating Frequency Range
Operating Temperature
UNITS
V
V
A
dBm
GHz
°C
TYP
3.5
2.0
22
25
MAX
6.0
2.5
0.5
23
2.0
85
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1ms.
3. Freq = 1.9 GHz, V
DS
= 3.5 V.
Note:
1. Duty Cycle 50%, Ton = 1ms.
2. Freq = 1.9 GHz, V
DS
= 3.5 V.
ORDERING INFORMATION
1
PART NUMBER
NE5510179A-T1
Note:
QTY
1 K/Reel
TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs.
DRAIN TO SOURCE CURRENT
6.0
V
GS
(MAX) = 10 V,
Step = 1.0 V
5.0
(T
A
= 25°C)
1. Embossed tape 12 mm wide. Gate pin face to perforations side
of the tape.
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1000
V
DS
= 3.5 V
Drain Current, I
DQ
(mA)
0
2
4
6
8
10
12
14
16
Drain Current, I
D
(A)
100
4.0
3.0
10
2.0
1
1.0
0.0
0
1.0
1.5
2.0
2.5
3.0
Drain to Source Current, V
DS
(V)
Gate to Source Voltage, V
GS
(V)