NE5511279A
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25 °C)
SYMBOLS
V
DS
V
GS
I
D
P
TOT
T
CH
T
STG
PARAMETERS
UNITS
V
V
A
W
°C
°C
RATINGS
20.0
6.0
3.0
20
125
-55 to +125
Drain Supply Voltage
2
Gate Supply Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
RECOMMENDED OPERATING LIMITS
SYMBOLS
V
DS
V
GS
I
DS
P
IN
PARAMETERS
UNITS
V
V
A
dBm
TYP
7.5
2.0
2.5
27
Drain to Source Voltage
Gate Supply Voltage
Drain Current
1
Input Power
f = 900 MHz, V
DS
= 7.5 V
MAX
8.0
3.0
3.0
30
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. V
DS
must be used under 12 V on RF operation.
P.C.B. LAYOUT
(Units in mm)
79A PACKAGE
4.0
1.7
Source
ORDERING INFORMATION
PART NUMBER
NE5511279A-T1-A
QTY
• 12 mm wide embossed taping.
• Gate pin faces the perforation side of
the tape.
• 1 Kpcs/Reel
NE5511279A-T1A-A
Gate
5.9
1.0
Drain
1.2
0.5
Through hole
φ
0.2
×
33
0.5
6.1
0.5
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
TYPICAL PERFORMANCE CURVES
OUTPUT POWER, DRAIN CURRENT,
η
d
,
η
add
vs. INPUT POWER
45
(T
A
= 25°C)
OUTPUT POWER, DRAIN CURRENT,
η
d
,
η
add
vs. INPUT POWER
Drain Efficiency,
ηd
(%)
Power Added Efficiency,
ηadd
(%)
f = 900 MHz
5
P
out
4
I
DS
45
Output Power, P
out
(dBm)
Output Power, P
out
(dBm)
40
100
40
I
DS
35
η
d
4
100
35
η
d
3
75
3
75
30
η
add
2
50
30
η
add
2
50
25
1
25
25
1
25
20
10
15
20
25
30
0
35
0
20
10
15
20
25
30
0
35
0
Input Power,P
in
(dBm)
Input Power,P
in
(dBm)
Drain Efficiency,
ηd
(%)
Power Added Efficiency,
ηadd
(%)
f = 460 MHz
5
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
P
out
CEL [ CALIFORNIA EASTERN LABS ]
