NPN SILICON GERMANIUM RF TRANSISTOR
NESG3033M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ V
CE
= 2 V, I
C
= 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: f
max
= 110 GHz
• This product is improvement of ESD of NESG3032M14.
• 4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
Part Number
NESG3033M14
Order Number
NESG3033M14-A
Package
4-pin lead-less minimold
(M14, 1208 PKG)
NESG3033M14-T3 NESG3033M14-T3-A
(Pb-Free)
Quantity
50 pcs
(Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
Note 1
Ratings
5.0
4.3
12
35
150
150
−65
to +150
Unit
V
V
mA
mA
mW
°C
°C
V
CEO
I
B
Note 1
I
C
P
tot
Note 2
T
j
T
stg
Notes 1.
V
CBO
and I
B
are limited by the permissible current of the protection element.
2.
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10640EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
2006
CEL [ CALIFORNIA EASTERN LABS ]
