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NESG3033M14 参数 Datasheet PDF下载

NESG3033M14图片预览
型号: NESG3033M14
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SILICON GERMANIUM RF TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 7 页 / 277 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG3033M14
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
⏐S
21e
NF
G
a
C
re
Note 2
Note
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 6 mA
220
300
100
100
380
nA
nA
V
CE
= 2 V, I
C
= 15 mA, f = 2.0 GHz
V
CE
= 2 V, I
C
= 6 mA, f = 2.0 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 2.0 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 2 V, I
C
= 15 mA, f = 2.0 GHz
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 2.0 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 2.0 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
15.0
17.5
17.5
0.60
17.5
0.15
20.5
0.85
0.25
dB
dB
dB
pF
dB
MSG
3
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
P
O (1 dB)
OIP
3
12.5
24.0
dBm
dBm
Notes 1.
Pulse measurement: PW
350
µ
s, Duty Cycle
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
zL
220 to 380
Data Sheet PU10640EJ01V0DS
3