EP7311
High-Performance, Low-Power System on Chip
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
DC Core, PLL, and RTC Supply Voltage
DC I/O Supply Voltage (Pad Ring)
DC Pad Input Current
Storage Temperature, No Power
2.9 V
3.6 V
±10
mA/pin;
±100
mA cumulative
–40°C to +125°C
Recommended Operating Conditions
DC core, PLL, and RTC Supply Voltage
DC I/O Supply Voltage (Pad Ring)
DC Input / Output Voltage
Operating Temperature
2.5 V
±
0.2 V
2.3 V - 3.5 V
O–I/O supply voltage
Extended -20°C to +70°C; Commercial 0°C to +70°C;
Industrial -40°C to +85°C
DC Characteristics
All characteristics are specified at V
DDCORE
= 2.5 V, V
DDIO
= 3.3 V and V
SS
= 0 V over an operating temperature of 0°C to +70°C
for all frequencies of operation. The current consumption figures have test conditions specified per parameter.”
Symbol
VIH
VIL
VT+
Parameter
CMOS input high voltage
CMOS input low voltage
Schmitt trigger positive going
threshold
Schmitt trigger negative going
threshold
Schmitt trigger hysteresis
CMOS output high voltage
a
Min
0.65
×
V
DDIO
V
SS
−
0.3
-
Typ
-
-
-
Max
V
DDIO
+ 0.3
0.25
×
V
DDIO
2.1
Unit
V
V
V
Conditions
V
DDIO
= 2.5 V
V
DDIO
= 2.5 V
VT-
Vhst
0.8
0.1
V
DD
– 0.2
2.5
2.5
-
-
-
-
25
8
8
-
-
-
-
-
-
-
-
-
-
-
-
-
0.4
-
-
-
0.3
0.5
0.5
1.0
100
10.0
10.0
V
V
V
V
V
V
V
V
µA
µA
pF
pF
VIL to VIH
IOH = 0.1 mA
IOH = 4 mA
IOH = 12 mA
IOL = –0.1 mA
IOL = –4 mA
IOL = –12 mA
VIN = V
DD
or GND
VOUT = V
DD
or GND
VOH
Output drive 1
a
Output drive 2
a
CMOS output low voltage
a
VOL
Output drive 1
a
Output drive 2
a
IIN
IOZ
CIN
COUT
Input leakage current
Bidirectional 3-state leakage
current
b c
Input capacitance
Output capacitance
DS506F1
©
Copyright Cirrus Logic, Inc. 2005
(All Rights Reserved)
13
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