SEMICONDUCTORS
BD644/646/648/650/652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
BD644
BD646
BD648
BD650
-IE=0,-VCB =-VCEOMAX
-
-
0.1
mA
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Collector Cutoff Current
-ICBO
-IE=0,-VCB =1/2 -VCBOMAX,
TJ=150°C
-
-
-
-
-
-
1
mA
mA
mA
Collector Cutoff Current
Emitter Cutoff Current
-IE=0, -VCE =1/2 -VCEOMAX
0.2
5.0
-ICEO
-VEB=5 V, -IC=0
-IEBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
2
2
2
-IC=4 A, -IB=16 mA
-IC=3 A, -IB=12 mA
Collector-Emitter saturation
Voltage (*)
V
-VCE(SAT)
2
2.5
2.5
2.5
2.5
2.5
-IC=5 A, -IB=50 mA
-IC=12 A, -IB=50 mA
Base-Emitter Saturation
Voltage (*)
-
-
3
V
-VBE(SAT)
Page 3 of 5
COMSET [ COMSET SEMICONDUCTOR ]
