SEMICONDUCTORS
BD644/646/648/650/652
Symbol
Ratings
Value
Unit
BD644
BD646
-
-
-
-
2.5
-
-IC=4 A, -VCE=3 V
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Base-Emitter Voltage (*)
V
-VBE
2.5
2.5
2.5
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-IC=3 A, -VCE=3 V
-
-
-
-
-VCE=3.0 V, -IC=0.5 A
2700
-
750
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-VCE=3.0 V, -IC=4 A
DC Current Gain (*)
-
hFE
-VCE=3.0 V, -IC=3 A
750
-
-
-
-
-
10
-
-
-
-
-VCE=3.0 V, -IC=8 A
200
-
-
-
-
-
-
-
-
-
-VCE=3.0 V, -IC=4 A, f=1MHz
Small Signal Current Gain
hfe
-
10
10
10
10
-
-VCE=3.0 V, -IC=3 A, f=1MHz BD648
BD650
BD652
-
1
5
-
-
-
turn-on time
turn-off time
µs
µs
ton
toff
-IC=3 A, -IBon= IBoff=12 mA
All types
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Page 4 of 5
COMSET [ COMSET SEMICONDUCTOR ]
