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BCP52 参数 Datasheet PDF下载

BCP52图片预览
型号: BCP52
PDF下载: 下载PDF文件 查看货源
内容描述: 采用SOT223 PNP硅平面中功率晶体管 [PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223]
分类和应用: 晶体晶体管开关光电二极管PC局域网
文件页数/大小: 7 页 / 116 K
品牌: DIODES [ DIODES INCORPORATED ]
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BCP 51 / 52 / 53
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
BCP51
-45
-45
BCP52
-60
-60
-5
-1
-2
-100
-200
BCP53
-100
-80
Unit
V
V
V
A
mA
Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
2
62
19.4
-65 to +150
Unit
W
°C/W
°C/W
°C
4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
2 of 7
June 2011
© Diodes Incorporated