BCP 51 / 52 / 53
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
-45
-60
-100
-45
-60
-80
-5
Typ
Max
Unit
Test Condition
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
Collector-Base
Breakdown Voltage
-
-
V
BVCBO
IC = -100µA
Collector-Emitter
-
-
-
V
BVCEO
IC = -10mA
Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-
-
-
V
BVEBO
ICBO
IE = -10µA
VCB = -30V
CB = -30V, TA = 150°C
VEB = -4V
C = -5mA, VCE = -2V
IC = -150mA, VCE = -2V
C = -500mA, VCE = -2V
C = -150mA, VCE = -2V
C = -150mA, VCE = -2V
-0.1
-20
-
-
µA
nA
V
Emitter Cut-off Current
-20
IEBO
I
25
40
25
-
-
-
-
250
-
All versions
I
I
I
Static Forward Current Transfer Ratio (Note 6)
-
hFE
10 gain grp
16 gain grp
63
-
-
-
-
160
250
-0.5
-1.0
100
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
-
-
V
V
VCE(sat)
VBE(on)
IC = -500mA, IB = -50mA
IC = -500mA, VCE = -2V
I
C = -50mA, VCE = -10V
Transition Frequency
Output Capacitance
fT
150
-
-
-
-
MHz
pF
f = 100MHz
Cobo
25
VCB = -10V, f = 1MHz
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
500
1.0
0.8
V
= -5V
CE
I
= 10mA
B
I
= 8mA
B
400
300
T
T
= 150°C
A
I
= 6mA
B
0.6
0.4
= 85°C
= 25°C
I
= 4mA
A
A
B
T
T
200
100
0
I
= 2mA
B
0.2
0
= -55°C
A
0.001
0.01
0.1
1
10
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
vs. Collector-Emitter Voltage
4 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
DIODES [ DIODES INCORPORATED ]
