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DMN601DWK-7 参数 Datasheet PDF下载

DMN601DWK-7图片预览
型号: DMN601DWK-7
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 4 页 / 132 K
品牌: DIODES [ DIODES INCORPORATED ]
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DMN601DWK
Lead-free Green
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
K
S
2
G
2
D
1
D
2
SOT-363
Dim
A
G
1
S
1
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
A
B
B C
C
D
F
H
J
M
0.65 Nominal
G
H
K
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
J
D
F
L
L
M
α
Drain
All Dimensions in mm
D
2
G
1
S
1
Body
Diode
Gate
S
2
G
2
D
1
Gate
Protection
Diode
ESD protected up to 2kV
Source
EQUIVALENT CIRCUIT PER ELEMENT
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
DSS
V
GSS
Continuous
Pulsed (Note 3)
I
D
P
d
R
θJA
T
j
, T
STG
Value
60
±20
305
800
200
625
-65 to +150
Units
V
V
mA
mW
°C/W
°C
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤10µS,
Duty Cycle
≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30656 Rev. 2 - 2
1 of 4
www.diodes.com
DMN601DWK
©
Diodes Incorporated