@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 10µA
60
⎯
⎯
⎯
⎯
⎯
⎯
1
V
V
DS = 60V, VGS = 0V
µA
µA
IGSS
VGS 20V, VDS = 0V
=
10
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS(th)
1.0
1.6
2.5
V
⎯
⎯
2.0
3.0
RDS (ON)
Static Drain-Source On-Resistance
⎯
Ω
|Yfs|
VSD
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
80
⎯
⎯
⎯
ms
V
VGS = 0V, IS = 115mA
0.5
1.4
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
50
25
pF
pF
pF
V
DS = 25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
5.0
Notes: 5. Short duration test pulse used to minimize self-heating effect.
1.4
1.00
0.10
0.01
VGS = 10V
8V
6V
5V
4V
VDS = 10V
10V
8V
Pulsed
1.2
6V
3V
1.0
5V
TA = 125°C
0.8
TA = 75°C
4V
0.6
0.4
TA = 25°C
0.2
TA = -25°C
3V
0
1
1.5
2
5
2.5
3
3.5
4
4.5
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
10
2
VGS = 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
TA = 125°C
TA = 150°C
TA = 85°C
1.5
1
1
TA = -55°C
TA = -25°C
TA = 0°C
TA = 25°C
0.5
0
0.1
0.001
-25
75 100
0
25
50
125 150
-50
0.1
1
0.01
Tch, CHANNEL TEMPERATURE (°C)
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
DS30656 Rev. 2 - 2
2 of 4
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DMN601DWK
DIODES [ DIODES INCORPORATED ]
