ZTX968
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Static Forward Current
Transfer Ratio
SYMBOL
h
FE
MIN.
300
300
200
150
TYP.
450
450
300
240
50
80
161
120
116
MAX.
1000
UNIT
CONDITIONS.
I
C
=-10mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
MHz
pF
ns
ns
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-20V, f=1MHz
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance: Junction to Ambient
Junction to Case
SYMBOL
R
th(j-amb)
R
th(j-case)
MAX.
150
50
UNIT
°C/W
°C/W
Max Power Dissipation - (Watts)
4.0
Thermal Resistance (°C/W)
150
t
1
D.C.
D=t
1
/t
P
3.0
Ca
se
100
te
t
P
D=0.6
2.0
m
1.0
Amb
ient t
emp
eratu
-40 -20
0
20 40
pe
ra
tu
re
50
D=0.2
D=0.1
re
60 80 100 120 140 160 180 200
0
0.0001
D=0.05
Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-334
DIODES [ DIODES INCORPORATED ]
