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ZXMP2120FFTA 参数 Datasheet PDF下载

ZXMP2120FFTA图片预览
型号: ZXMP2120FFTA
PDF下载: 下载PDF文件 查看货源
内容描述: 200V SOT23F P沟道增强型MOSFET [200V SOT23F P-channel enhancement mode MOSFET]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 10 页 / 411 K
品牌: DIODES [ DIODES INCORPORATED ]
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ZXMP2120FF  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Drain-source voltage  
V
-200  
V
DSS  
Gate-source voltage  
V
20  
V
GS  
(a)  
I
-137  
mA  
Continuous drain current @ V = 10V; T  
=25°C  
D
GS  
amb  
(c)  
I
-0.8  
-0.8  
1
A
A
Pulsed drain current  
DM  
(c)  
I
Pulsed source current (body diode)  
SM  
(a)  
P
W
Power dissipation at T  
Linear derating factor  
=25°C  
D
amb  
8
mW/°C  
W
(b)  
P
1.5  
Power dissapation at T  
=25°C  
D
amb  
Linear derating factor  
12.3  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to +150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
125  
°C/W  
Junction to ambient  
JA  
(b)  
R
81  
°C/W  
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air  
conditions.  
(b)For a device surface mounted on FR4 pcb measured at t Յ5 sec.  
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction  
temperature.  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
2
www.zetex.com