ZXMP2120FF
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol Min. Max. Unit Conditions
Drain-source breakdown
voltage
V
-200
V
I = 1mA, V =0V
D GS
(BR)DSS
Zero gate voltage drain current I
-10
A
A
V
= -200V, V =0V
DS GS
DSS
(‡)
-100
V
V
= -160V, V =0V, T=125C
GS
DS
Gate-body leakage
I
20
-3.5
28
nA
V
= 20V, V =0V
DS
GSS
GS
Gate-source threshold voltage
V
-1.5
I = 250A, V =V
D DS GS
GS(th)
DS(on)
Static drain-source on-state
resistance
R
⍀
V
= -10V, I = -150mA
GS
D
(*)
(*)
I
-300
50
mA
mS
V
V
= -25V, V =-10V
On-state drain current
D(on)
DS
DS
GS
(*) (‡)
g
= -25V, I = -150mA
Forward transconductance
fs
D
(‡)
Dynamic
Input capacitance
C
100
25
7
pF
pF
pF
V
= -25V, V =0V
DS GS
iss
f=1MHz
Output capacitance
C
oss
rss
Reverse transfer capacitance
C
(†) (‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
7
ns
ns
ns
ns
V
= -25V, V = -10V
DD GS
d(on)
I = -150mA
D
15
12
15
r
R
≈ 50⍀
SOURCE
Turn-off delay time
Fall time
d(off)
f
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
DIODES [ DIODES INCORPORATED ]
