ZXTN25040DFH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Symbol
BV
CBO
Min.
130
130
40
7
6
6
Typ.
170
170
63
8.3
7.4
7.4
<1
-
50
20
100
Max.
Unit
V
V
V
V
V
V
nA
A
nA
Conditions
I
C
= 100 A
I
C
= 100 A; R
BE
< 1k
-1V < V
BE
< 0.25V
I
C
= 10mA
(*)
I
E
= 100 A
I
E
= 100 A, R
BC
< 1k or
0.25V > V
BC
> -0.25V
I
E
= 100 A,
V
CB
= 100V
V
CB
= 100V, T
amb
= 100°C
V
CE
= 100V; R
BE
< 1k
or
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 400mA
I
C
= 4A, I
B
= 400mA
I
C
= 4A, V
CE
= 2V
I
C
= 10mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 4A, V
CE
= 2V
I
C
= 10A, V
CE
= 2V
MHz
20
pF
ns
ns
ns
ns
2%.
Collector-emitter breakdown BV
CEX
voltage (forward blocking)
Collector-emitter breakdown BV
CEO
voltage (base open)
Emitter-base breakdown
voltage
BV
EBO
or
Emitter-collector breakdown BV
ECX
voltage (reverse blocking)
Emitter-collector breakdown BV
ECO
voltage (base open)
Collector-base cut-off current I
CBO
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I
CEX
I
EBO
V
CE(sat)
<1
45
120
135
140
50
55
210
210
190
1050
950
900
nA
mV
mV
mV
mV
mV
mV
Base-emitter saturation
voltage
V
BE(sat)
960
840
300
300
30
450
450
60
10
Base-emitter turn-on voltage V
BE(on)
Static forward current
transfer ratio
h
FE
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
d
t
r
t
s
t
f
190
11.7
64
108
428
130
300 s; duty cycle
I
C
= 50mA, V
CE
= 10V
f = 100MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V,
I
C
= 1A,
I
B1
= I
B2
= 10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
© Zetex Semiconductors plc 2006
DIODES [ DIODES INCORPORATED ]
