General Purpose Transistors
Characteristics (T
j
= 25
/
C)
BCW 31, BCW 32, BCW 33
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
750 mV
850 mV
190
330
600
–
–
–
–
–
2.5 pF
Max.
–
–
–
–
–
220
450
800
700 mV
–
–
Base saturation voltage – Basis-Sättigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 50 mA, I
B
= 2.5 mA
BCW 31
V
CE
= 5 V, I
C
= 10
:
A
BCW 32
BCW 33
BCW 31
V
CE
= 5 V, I
C
= 2 mA
BCW 32
BCW 33
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 2 mA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200
:
A, R
G
= 2 k
S
,
f = 1 kHz,
)
f = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking – Stempelung
BCW 31 = D1
F
–
R
thA
–
10 dB
420 K/W
2
)
BCW 29, BCW 30
BCW 32 = D2
BCW 33 = D3
f
T
C
CB0
100 MHz
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
BEon
550 mV
V
BEsat
V
BEsat
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
–
–
–
–
–
110
200
420
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
37
DIOTEC [ DIOTEC SEMICONDUCTOR ]
