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EM4169A6WP11 参数 Datasheet PDF下载

EM4169A6WP11图片预览
型号: EM4169A6WP11
PDF下载: 下载PDF文件 查看货源
内容描述: 128位读/写非接触式识别装置与OTP功能 [128 bit Read/Write Contactless Identification Device with OTP function]
分类和应用: 装置
文件页数/大小: 15 页 / 261 K
品牌: EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
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EM4069  
EM4169  
Absolute Maximum Ratings  
Handling Procedures  
VSS = 0V  
This device has built-in protection against high static  
voltages or electric fields. However due to the unique  
properties of this device, anti-static precautions should  
be taken as for any other CMOS component. Unless  
otherwise specified, proper operation can only occur  
when all terminal voltages are kept within the supply  
voltage range.  
Symbol  
Conditions  
Parameter  
Power supply  
Input Voltage (pads TST,  
TCP, TIO)  
VDD  
-0.3 to +5.5V  
- 0.3 to  
VDD+0.3V  
-30 to  
+30mA  
-10 to +10V  
-55 to  
VPIN  
Input current on COIL1  
Input voltage on COIL1  
Storage temperature  
ICOIL1  
VCOIL1  
TSTORE  
Operating Conditions VSS = 0V  
Parameter  
Symbol Min. Typ. Max. Units  
Operating temperature  
AC voltage on coil 1  
Maximum coil current  
Frequency on coil 1  
TOP  
VCOIL1  
ICOIL1  
FCOIL1  
-40  
+25 +85  
°C  
*
Vpp  
mA  
kHz  
+125°C  
-10  
10  
Electrostatic discharge to  
MIL-STD-883C method 3015  
100 125 150  
VESD  
1000V  
*) Maximum voltage is defined by forcing 10mA on  
Coil1 – Vss  
Stresses above these listed maximum ratings may cause  
permanent damage to the device. Exposure beyond  
specified electrical characteristics may affect device  
reliability or cause malfunction.  
Electrical parameters and functionality are not  
guaranteed when the circuit is exposed to light.  
Electrical Characteristics  
Unless otherwise specified: VDD= 1.0V to 5.5V, TA=-40 to +125°C.  
Parameter  
Symbol  
VDD  
Condition  
ICOIL1 = 10mA  
Min.  
3.0  
Typ.  
3.5  
Max.  
4.0  
Units  
V
Regulated Supply Voltage  
Reg. Voltage reading EEPROM (note 3)  
Supply current in read mode  
Reg. Voltage writing EEPROM  
Supply current write mode  
Power Check Voltage  
VRD  
2.0  
V
IRD  
3.8  
5,5  
µA  
V
VWR  
IWR  
2.5  
VDD = 3.5 V  
50  
2.8  
1.45  
3.6  
1.85  
100  
3.15  
1.75  
4.5  
µA  
V
VPC  
2.4  
1.2  
3
1.5  
0.5  
3.2  
20  
Modulator ON voltage drop  
Modulator ON voltage drop  
POR level  
Von1  
Von2  
VPOR  
VCOIL1  
Vpd  
ICOIL1 = ±100µA  
ICOIL1 = ±1 mA  
Rising edge  
V
V
2.20  
V
Clock extractor  
VPP  
VPP  
mV  
pF  
Peak detector threshold.  
Peak detector hysteresis  
Resonance capacitor (note 1)  
EEPROM data retention (note 2)  
EEPROM write cycles  
VDD = 3.3 V  
VDD = 3.3 V  
32 kHz, 0.3Vpp  
TOP = 55°C  
VDD = 3.6 V  
4
100  
78  
4.6  
200  
Vpdh  
CR  
TRET  
NCY  
10  
100000  
years  
cycles  
Note 1:  
Value of the resonance capacitor may vary in limits of 12%  
Statistics show a variation of capacitance within one lot of 5%.  
These figures are given as information only.  
Note 2:  
Note 3:  
Based on 1000 hours at 150°C.  
V
RD must be higher than VPOR Level.  
2
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Copyright 2003, EM Microelectronic-Marin SA