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PTF10021 参数 Datasheet PDF下载

PTF10021图片预览
型号: PTF10021
PDF下载: 下载PDF文件 查看货源
内容描述: 30瓦, 1.4-1.6 GHz的GOLDMOS场效应晶体管 [30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 281 K
品牌: ERICSSON [ ERICSSON ]
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PTF 10021
30 Watts, 1.4–1.6 GHz
GOLDMOS
Field Effect Transistor
Description
The PTF 10021 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for linear driver and
final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is
rated at 30 watts power output. Nitride surface passivation and full
gold metallization ensure excellent device lifetime and reliability.
INTERNALLY MATCHED
Performance at 1.5 GHz, 28 Volts
- Output Power = 30 Watts Min
- Power Gain = 13 dB Typ
- Efficiency = 48% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
40
Output Power (Watts)
30
20
100
21
A-1
234
569
813
V
DD
= 28 V
10
I
DQ
= 360 mA
f = 1.5 GHz
0
1
2
3
4
5
0
Input Power (Watts)
Package 20237
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 10 W, I
DQ
= 360 mA, f = 1.5 GHz)
Power Output at 1 dB Compressed
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 360 mA, f = 1.5 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 360 mA, f = 1.5 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W(PEP), I
DQ
= 360 mA, f = 1.5 GHz—
all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
Y
Min
11.0
30
45
Typ
13.0
48
Max
10:1
Units
dB
Watts
%
e
1