PTF 10021
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
2.2
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
105
0.6
–40 to +150
1.65
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Efficiency (%)
Return Loss (dB)
Output Power & Efficiency
15
14
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Efficiency (%)
Output Power (W)
Broadband Test Fixture Performance
60
50
40
30
14
12
Gain (dB)
60
50
Efficiency (%)
40
- 30
5
Return Loss (dB)
-15
20
-25
10
-35
0
1600
Gain (dB)
Gain
13
12
11
Gain (dB)
10
8
6
4
1400
V
DD
= 28 V
I
DQ
= 360 mA
P
OUT
= 10 W
V
DD
= 28 V
I
DQ
= 360 mA
20
10
1700
10
1300
1400
1500
1600
Frequency (MHz)
1450
1500
1550
Frequency (MHz)
2
ERICSSON [ ERICSSON ]
