PTF 10112
60 Watts, 1.8–2.0 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10112 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
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•
•
•
•
•
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INTERNALLY MATCHED
Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 60 Watts Min
- Power Gain = 12 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
80
Output Power (Watts)
60
A-12
40
1011
3456
2
98
37
V
CC
= 28 V
20
I
DQ
= 580 mA
f = 2000 MHz
0
1
2
3
4
5
6
0
Input Power (Watts)
Package 20248
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 15 W, I
DQ
= 580 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 580 mA, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 580 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 580 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
11
60
—
—
Typ
12
—
41
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
ERICSSON [ ERICSSON ]
